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<p>Pure BiVO<sub>4</sub> and SnS<sub>2</sub> were obtained by conventional precipitation and the hydrothermal method, respectively. The formation of a heterojunction between them was achieved through a simple ultrasonic approach. The X-ray diffraction patterns indicate the integration of monoclinic-BiVO<sub>4</sub> and hexagonal-SnS<sub>2</sub> and the optical response of the heterostructure shifted towards longer wavelength region. The transmission electron microscopy revealed the integration of 1D BiVO<sub>4</sub> rod-like structure adhering to the 2D flake-like SnS<sub>2</sub> to form stable 1D/2D heterojunctions. The electrochemical measurements and the computational studies revealed formation of the Step-scheme heterojunction between BiVO<sub>4</sub> and SnS<sub>2</sub> through the creation of Sn-S-V, S-V-O, O-Bi-S and Sn-S-Bi interfacial bonds, which induced a strong electric field and accelerated the separation of energetic charge carriers. The results derived from photoluminescence, photocurrent response and electrochemical impedance spectroscopy analysis collectively suggests the low degree of charge carrier recombination in the heterojunction compared to pure phase counterparts. The superoxide radicals dominated the degradation mechanism of indigo carmine dye, while holes and hydroxyl radicals contribute to the same extent. The BiVO<sub>4</sub>/SnS<sub>2</sub> was stable even after three cycles. The findings of the current work underpin the importance of interfacial bonds to accelerate the charge carrier dynamics in S-scheme heterojunctions.</p>

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BiVO4/SnS2 S-scheme heterojunction for improved photocatalytic performance under visible light: charge carrier mechanism validation by DFT and electrochemical studies

  • 期刊论文

  • 发表日期：

    2025年11月6日

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  • Pooja Mohan,
  • Srinivas Mallapur,
  • C. P. Prathibha,
  • B. M. Rajesh,
  • Imran Ullah,
  • Sakthivel Kandaiah,
  • Sarada K. Gopinathan,
  • S. Girish Kumar

摘要

Pure BiVO4 and SnS2 were obtained by conventional precipitation and the hydrothermal method, respectively. The formation of a heterojunction between them was achieved through a simple ultrasonic approach. The X-ray diffraction patterns indicate the integration of monoclinic-BiVO4 and hexagonal-SnS2 and the optical response of the heterostructure shifted towards longer wavelength region. The transmission electron microscopy revealed the integration of 1D BiVO4 rod-like structure adhering to the 2D flake-like SnS2 to form stable 1D/2D heterojunctions. The electrochemical measurements and the computational studies revealed formation of the Step-scheme heterojunction between BiVO4 and SnS2 through the creation of Sn-S-V, S-V-O, O-Bi-S and Sn-S-Bi interfacial bonds, which induced a strong electric field and accelerated the separation of energetic charge carriers. The results derived from photoluminescence, photocurrent response and electrochemical impedance spectroscopy analysis collectively suggests the low degree of charge carrier recombination in the heterojunction compared to pure phase counterparts. The superoxide radicals dominated the degradation mechanism of indigo carmine dye, while holes and hydroxyl radicals contribute to the same extent. The BiVO4/SnS2 was stable even after three cycles. The findings of the current work underpin the importance of interfacial bonds to accelerate the charge carrier dynamics in S-scheme heterojunctions.