Optimizing the solar cell performance based on terbium doped Cs2AgBiBr6 absorber and Zn2SnO4 electron transport layer
摘要
Lead-free double perovskites, such as Cs2AgBiBr6, have emerged as promising alternatives to toxic lead-based perovskites for solar applications. However, their practical use is limited by a wide indirect bandgap (Eg) and low efficiency. In this study, we address these challenges by incorporating terbium (Tb) doping into Cs2AgBiBr6, synthesized via single-source vapor deposition, and integrating a Zn2SnO4 (ZTO) electron transport layer (ETL). X-ray diffraction (XRD) confirms the cubic phase of Cs2AgBiBr6, while Tb doping enhances structural properties, increasing grain size (35 nm), d-spacing (2.76 Å), and lattice constant (10.05 Å). Optical characterization via UV–vis spectroscopy reveals a reduced bandgap (1.79 eV) and elevated refractive index (2.80) in Tb-doped films, facilitating improved light absorption. Solar cells fabricated with the structure glass/FTO/TiO2/Cs2Ag0.95Tb0.05BiBr6/Spiro-OMeTAD/Au achieve a short-circuit current density (Jsc) of 5.83 mA·cm⁻2 and a power conversion efficiency (η) of 3.96%. To further enhance performance, a spin-coated ZTO ETL is introduced, exhibiting a spinel structure (XRD), a prominent Raman peak at 674.67 cm⁻¹, and high visible-region transmittance (> 90%). The optimized device glass/FTO/TiO2/ZTO/Cs2Ag0.95Tb0.05BiBr6/Spiro-OMeTAD/Au demonstrates superior performance, with Jsc = 6.06 mA·cm⁻2, fill factor (FF) = 0.73, and η = 4.25%. These results highlight the synergistic role of Tb doping and ZTO integration in improving band alignment, carrier injection, and efficiency, advancing the development of eco-friendly perovskite solar cells.