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<p>The effects of sulfur annealing temperature (300–600&#xa0;°C) in vacuum (V) and air (A) conditions for 1&#xa0;h on the properties of n-type iron-sulfide-oxide (FeS<sub>x</sub>O<sub>y</sub>: as-deposited) film were studied. Increasing the annealing temperature for both conditions resulted in larger agglomerations of the grain/particle consisting of various sizes, increased film resistance, and lowered the bandgap due to oxygen reduction. The transformation of n-type to p-type occurred at an annealing temperature &gt; 400&#xa0;°C, and pure marcasite (FeS<sub>2</sub>) appeared in Raman spectra for the films annealed in air at 500&#xa0;°C. The average efficiency of the FeS<sub>x</sub>O<sub>y</sub> homostructure solar cell containing 50 mM tartaric acid (0.57%) is slightly higher than that of 100 mM lactic acid (0.39%). The low efficiency of our fabricated solar cells was primarily due to the high resistance of the p-type film, which partly hindered the free motion of carrier charges.</p>

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Transformation of n-type FeSxOy semiconductor to p-type by sulfur annealing in vacuum and air for homostructure solar cell applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月14日

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  • Adrian Afzal Ariff,
  • Aizuddin Supee,
  • Mohd Zamri Mohd Yusop,
  • Mohd Akhmal Muhamad Sidek

摘要

The effects of sulfur annealing temperature (300–600 °C) in vacuum (V) and air (A) conditions for 1 h on the properties of n-type iron-sulfide-oxide (FeSxOy: as-deposited) film were studied. Increasing the annealing temperature for both conditions resulted in larger agglomerations of the grain/particle consisting of various sizes, increased film resistance, and lowered the bandgap due to oxygen reduction. The transformation of n-type to p-type occurred at an annealing temperature > 400 °C, and pure marcasite (FeS2) appeared in Raman spectra for the films annealed in air at 500 °C. The average efficiency of the FeSxOy homostructure solar cell containing 50 mM tartaric acid (0.57%) is slightly higher than that of 100 mM lactic acid (0.39%). The low efficiency of our fabricated solar cells was primarily due to the high resistance of the p-type film, which partly hindered the free motion of carrier charges.