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<p>Herein, high crystalline quality orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> epitaxial films were grown on c-Al<sub>2</sub>O<sub>3</sub> substrates via hydride vapor phase epitaxy. A pure-phase κ-Ga<sub>2</sub>O<sub>3</sub> film deposited at 800 ℃ exhibited exceptional crystalline quality, with a symmetric rocking-curve full width at half maximum of 379″. The out-of-plane epitaxial relationship between the κ-Ga<sub>2</sub>O<sub>3</sub> film and c-Al<sub>2</sub>O<sub>3</sub> substrate was determined to be κ-Ga<sub>2</sub>O<sub>3</sub> (001)//Al<sub>2</sub>O<sub>3</sub> (0001), and the in-plane epitaxial relationships were κ-Ga<sub>2</sub>O<sub>3</sub> [010]//Al<sub>2</sub>O<sub>3</sub> [10_10] and κ-Ga<sub>2</sub>O<sub>3</sub> [110]//Al<sub>2</sub>O<sub>3</sub> [1_100]. The film deposited at 800 ℃ showed an average visible-light transmittance of 70%, an optical bandgap of 4.72&#xa0;eV. Photoluminescence (PL) spectra show that the films exhibit strong ultraviolet (UV)-green emission in the wavelength range of 300 to 700&#xa0;nm. The Hall mobility of this film was 25 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, with a carrier concentration of 3.34 × 10<sup>18</sup> cm<sup>−3</sup>.</p>

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Structural and optical properties of high crystalline quality orthorhombic к-Ga2O3 heteroepitaxial films grown by HVPE

  • 期刊论文

  • 发表日期：

    2025年9月19日

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  • Jinlong Liang,
  • Wei Mi,
  • Qing Li,
  • Di Wang,
  • Lin’an He,
  • Rongrong Chen,
  • Liwei Zhou,
  • Yan Peng,
  • Mingsheng Xu,
  • Longfei Xiao,
  • Xingcheng Zhang,
  • Chongbiao Luan,
  • Jinshi Zhao

摘要

Herein, high crystalline quality orthorhombic κ-Ga2O3 epitaxial films were grown on c-Al2O3 substrates via hydride vapor phase epitaxy. A pure-phase κ-Ga2O3 film deposited at 800 ℃ exhibited exceptional crystalline quality, with a symmetric rocking-curve full width at half maximum of 379″. The out-of-plane epitaxial relationship between the κ-Ga2O3 film and c-Al2O3 substrate was determined to be κ-Ga2O3 (001)//Al2O3 (0001), and the in-plane epitaxial relationships were κ-Ga2O3 [010]//Al2O3 [10_10] and κ-Ga2O3 [110]//Al2O3 [1_100]. The film deposited at 800 ℃ showed an average visible-light transmittance of 70%, an optical bandgap of 4.72 eV. Photoluminescence (PL) spectra show that the films exhibit strong ultraviolet (UV)-green emission in the wavelength range of 300 to 700 nm. The Hall mobility of this film was 25 cm2 V−1 s−1, with a carrier concentration of 3.34 × 1018 cm−3.