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<p>The lamellar Transition metal chalcogenides (TMC) semiconductors from IV-VI group have attracted researchers due to their tunable properties. Here, the author demonstrated the growth of GeSe single crystals using direct vapour transport (DVT) technique. The structural property of grown crystals is studied by powder X-ray diffraction (PXRD). The transmission electron microscopy (TEM) of the grown crystal revealed that the grown material is single-crystalline. UV-Visible-NIR (UV-VIS-NIR) spectroscopy is carried out to study the band gap of GeSe crystal. The vibrational modes of GeSe are studied by RAMAN spectroscopy. The photodetector based on GeSe crystal is fabricated and its temporal photoresponse is studied under 670&#xa0;nm Light of power intensity 3 mW/cm<sup>2</sup> and white Light of different intensities. The detector showed a fast response with a response time 0.1&#xa0;s. The photocurrent 30.222 µA is achieved under 670&#xa0;nm Light. In addition, the enhanced photoresponsivity of 105.79 mA W<sup>−1</sup> and specific detectivity of 4.80 × 10<sup>10</sup> Jones are also achieved under 670&#xa0;nm laser illumination with 3 mW/cm<sup>2</sup>.</p>

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Exploring the photodetection properties of layered GeSe single-crystal

  • 期刊论文

  • 发表日期：

    2025年9月24日

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  • Megha Patel,
  • Abhishek Patel,
  • Mohit Tannarana,
  • Pratik M. Pataniya,
  • Chetan Zankat,
  • Ankurkumar J. Khimani,
  • G. K. Solanki

摘要

The lamellar Transition metal chalcogenides (TMC) semiconductors from IV-VI group have attracted researchers due to their tunable properties. Here, the author demonstrated the growth of GeSe single crystals using direct vapour transport (DVT) technique. The structural property of grown crystals is studied by powder X-ray diffraction (PXRD). The transmission electron microscopy (TEM) of the grown crystal revealed that the grown material is single-crystalline. UV-Visible-NIR (UV-VIS-NIR) spectroscopy is carried out to study the band gap of GeSe crystal. The vibrational modes of GeSe are studied by RAMAN spectroscopy. The photodetector based on GeSe crystal is fabricated and its temporal photoresponse is studied under 670 nm Light of power intensity 3 mW/cm2 and white Light of different intensities. The detector showed a fast response with a response time 0.1 s. The photocurrent 30.222 µA is achieved under 670 nm Light. In addition, the enhanced photoresponsivity of 105.79 mA W−1 and specific detectivity of 4.80 × 1010 Jones are also achieved under 670 nm laser illumination with 3 mW/cm2.