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<p>This study investigates the internal modification of SI-type 4&#xa0;H-SiC wafers via femtosecond laser irradiation at a wavelength of 1030&#xa0;nm, focusing on the influence that the characteristics of the laser-induced internal stress-adjustment zones have on the macroscopic warpage of the wafers. Nonlinear optical effects generated multiple internal modification zones, each characterized by clusters, lateral cracks, and nanovoids, as revealed by SEM and confirmed by Raman mapping. Residual stress analysis showed a central compressive core surrounded by tensile stress within each zone. Deformation measurements were conducted at varying scanning speeds, revealing that lower scanning speeds produce more internal modification zones, resulting in greater overall deformation. These findings underscore the intricate relationship between stress adjustment zones and their critical role in driving the deformation of SI-type 4&#xa0;H-SiC specimens.</p>

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Effect of femtosecond laser-induced internal stress adjustment zones on 4 H-SiC wafer warpage

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年8月21日

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  • Jia-Fan Kuo,
  • Yun-Chieh Tsai,
  • Chung-Wei Cheng,
  • An-Chen Lee

摘要

This study investigates the internal modification of SI-type 4 H-SiC wafers via femtosecond laser irradiation at a wavelength of 1030 nm, focusing on the influence that the characteristics of the laser-induced internal stress-adjustment zones have on the macroscopic warpage of the wafers. Nonlinear optical effects generated multiple internal modification zones, each characterized by clusters, lateral cracks, and nanovoids, as revealed by SEM and confirmed by Raman mapping. Residual stress analysis showed a central compressive core surrounded by tensile stress within each zone. Deformation measurements were conducted at varying scanning speeds, revealing that lower scanning speeds produce more internal modification zones, resulting in greater overall deformation. These findings underscore the intricate relationship between stress adjustment zones and their critical role in driving the deformation of SI-type 4 H-SiC specimens.