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<p>This study focuses on the modification and coating characteristics of cadmium telluride (CdTe) solar cells, a leading thin-film technology known for its high absorption coefficient and suitability for large-scale photovoltaic applications. Despite their efficiency, CdTe solar cells face limitations in achieving optimal interface and back contact properties, which can hinder performance. This research aims to enhance the functional performance of cadmium sulfide (n-CdS)/p-CdTe junctions with varying zinc telluride (ZnTe) doping thicknesses (50–100&#xa0;nm) and a 10&#xa0;nm copper (Cu) back contact layer via the thermal evaporation route. The effects of the ZnTe and Cu layers on optical and electrical characteristics are evaluated. The X-ray diffraction (XRD) analysis reveals better crystalline peaks with ZnTe/Cu smaller peaks. An n-CdS/p-CdTe junction with a ZnTe (100&#xa0;nm) layer and a Cu (10&#xa0;nm) layer facilitates superior optical and electrical behaviour. The current density at short circuit (J<sub>sc</sub>) is found to have a value of 26.2&#xa0;mA/cm², while the electrical conductivity reaches its peak at 1.12 × 10⁻³ S/cm, indicating improved properties for charge transport. The transmittance is around 58% in the infrared region, and the Tauc plot reveals an optical bandgap of 1.78&#xa0;eV, indicating enhanced energy band alignment. Analysis of the J-V curve reveals an open-circuit voltage (Voc) of 0.83&#xa0;V and a power conversion efficiency (PCE) of 16.8%, the highest among the tested configurations, demonstrating the effectiveness of optimizing the ZnTe layer in improving overall photovoltaic performance.</p>

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Enhancing CdTe solar cell performance via znte/cu back contact optimization

  • 期刊论文

  • 发表日期：

    2025年8月20日

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  • R. Venkatesh,
  • Viyat Varun Upadhyay,
  • N. Naga Bhooshanam,
  • Vinayagam Mohanavel,
  • K. Karthik,
  • Manikandan Ayyar,
  • Manickam Ravichandran,
  • Manzoore Elahi M. Soudagar,
  • A. H. Seikh

摘要

This study focuses on the modification and coating characteristics of cadmium telluride (CdTe) solar cells, a leading thin-film technology known for its high absorption coefficient and suitability for large-scale photovoltaic applications. Despite their efficiency, CdTe solar cells face limitations in achieving optimal interface and back contact properties, which can hinder performance. This research aims to enhance the functional performance of cadmium sulfide (n-CdS)/p-CdTe junctions with varying zinc telluride (ZnTe) doping thicknesses (50–100 nm) and a 10 nm copper (Cu) back contact layer via the thermal evaporation route. The effects of the ZnTe and Cu layers on optical and electrical characteristics are evaluated. The X-ray diffraction (XRD) analysis reveals better crystalline peaks with ZnTe/Cu smaller peaks. An n-CdS/p-CdTe junction with a ZnTe (100 nm) layer and a Cu (10 nm) layer facilitates superior optical and electrical behaviour. The current density at short circuit (Jsc) is found to have a value of 26.2 mA/cm², while the electrical conductivity reaches its peak at 1.12 × 10⁻³ S/cm, indicating improved properties for charge transport. The transmittance is around 58% in the infrared region, and the Tauc plot reveals an optical bandgap of 1.78 eV, indicating enhanced energy band alignment. Analysis of the J-V curve reveals an open-circuit voltage (Voc) of 0.83 V and a power conversion efficiency (PCE) of 16.8%, the highest among the tested configurations, demonstrating the effectiveness of optimizing the ZnTe layer in improving overall photovoltaic performance.