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<p>Reliable metal–semiconductor contacts are essential for developing next-generation HgCdTe-based infrared detectors and THz matrix bolometers. This study investigates the electrical properties of chromium contacts with p-type Hg₀.₇₂Cd₀.₂₈Te and p–CdTe/p–Hg₀.₇₂Cd₀.₂₈Te heterostructures formed by Cr film deposition at room temperature under vacuum. Using the Linear Transmission Line Model (LTLM), the specific contact resistance (ρ<sub>c</sub>) was measured, revealing linear or near-linear I–V characteristics at 77&#xa0;K and 300&#xa0;K. For the Cr/p–CdTe/p–Hg₀.₇₂Cd₀.₂₈Te interface, the specific contact resistance values were ρ<sub>c</sub>(77&#xa0;K) = 0.30 Ω·cm² and ρ<sub>c</sub>(300&#xa0;K) = 0.03 Ω·cm². For the Cr/p–Hg₀.₇₂Cd₀.₂₈Te interface, ρ<sub>c</sub> was 0.15 Ω·cm² at 77&#xa0;K and 0.029 Ω·cm² at 300&#xa0;K. The relatively high ρ<sub>c</sub> value is attributed to Cr-oxide formation and elemental diffusion into the metal layer. No dielectric interlayer was found at the interface. Current transport is interpreted via the metal-induced gap states (MIGS) model for Schottky barriers. Results suggest that quasi-ohmic behavior is achievable only in large-area contacts, while smaller contacts exhibit nonlinearity due to the dominance of barrier resistance.</p>

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Electrical characterization of Cr/p–Hg₁₋ₓCdₓTe (x = 0.28, 1.0) contacts using LTLM: contact resistance and current transport mechanism

  • 期刊论文

  • 发表日期：

    2025年8月21日

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  • F. Sizov,
  • A. Zinovchuk,
  • V. Slipokurov,
  • Ye. Melezhyk,
  • Z. Tsybrii

摘要

Reliable metal–semiconductor contacts are essential for developing next-generation HgCdTe-based infrared detectors and THz matrix bolometers. This study investigates the electrical properties of chromium contacts with p-type Hg₀.₇₂Cd₀.₂₈Te and p–CdTe/p–Hg₀.₇₂Cd₀.₂₈Te heterostructures formed by Cr film deposition at room temperature under vacuum. Using the Linear Transmission Line Model (LTLM), the specific contact resistance (ρc) was measured, revealing linear or near-linear I–V characteristics at 77 K and 300 K. For the Cr/p–CdTe/p–Hg₀.₇₂Cd₀.₂₈Te interface, the specific contact resistance values were ρc(77 K) = 0.30 Ω·cm² and ρc(300 K) = 0.03 Ω·cm². For the Cr/p–Hg₀.₇₂Cd₀.₂₈Te interface, ρc was 0.15 Ω·cm² at 77 K and 0.029 Ω·cm² at 300 K. The relatively high ρc value is attributed to Cr-oxide formation and elemental diffusion into the metal layer. No dielectric interlayer was found at the interface. Current transport is interpreted via the metal-induced gap states (MIGS) model for Schottky barriers. Results suggest that quasi-ohmic behavior is achievable only in large-area contacts, while smaller contacts exhibit nonlinearity due to the dominance of barrier resistance.