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<p>This work investigates the electrical properties of polyaniline (PANI)/n-GaAs hybrid devices. PANI thin films were spin-coated onto (311)A, (311)B and (100) n-GaAs substrates and characterized using Atomic Force Microscopy (AFM) and Raman spectroscopy. The AFM results reveal that the (311)A surface has significantly higher roughness (3.64&#xa0;nm) compared to the (311)B (1.87&#xa0;nm) and (100) (0.99&#xa0;nm) surfaces. Raman spectra suggest that the increased roughness and surface step density of the (311)A orientation promote improved polymer alignment, stronger interfacial bonding, and enhanced π-conjugation, contributing to the superior electrical performance of the (311)A films. Electrical measurements, including dark current-voltage (I-V) and capacitance-voltage (C-V), were conducted over a temperature range of 20–440&#xa0;K. The I-V characteristics show a decrease in the ideality factor and an increase in barrier height with rising temperature. Additionally, interface states were analyzed through series resistance measurements using capacitance-conductance-voltage (C-G-V) techniques. These findings demonstrate that PANI films deposited on (311)A GaAs substrates exhibit superior electrical performance compared to those grown on conventional (100) GaAs and (311)B GaAs substrates.</p>

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Electrical characterization at different temperature of PANI/GaAs heterostructures grown on (311)A n-GaAs plane

  • 期刊论文

  • 发表日期：

    2025年8月5日

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  • Dler Adil Jameel,
  • John F. Ricardo Marroquin,
  • Mohamed Henini,
  • Jorlandio F. Felix

摘要

This work investigates the electrical properties of polyaniline (PANI)/n-GaAs hybrid devices. PANI thin films were spin-coated onto (311)A, (311)B and (100) n-GaAs substrates and characterized using Atomic Force Microscopy (AFM) and Raman spectroscopy. The AFM results reveal that the (311)A surface has significantly higher roughness (3.64 nm) compared to the (311)B (1.87 nm) and (100) (0.99 nm) surfaces. Raman spectra suggest that the increased roughness and surface step density of the (311)A orientation promote improved polymer alignment, stronger interfacial bonding, and enhanced π-conjugation, contributing to the superior electrical performance of the (311)A films. Electrical measurements, including dark current-voltage (I-V) and capacitance-voltage (C-V), were conducted over a temperature range of 20–440 K. The I-V characteristics show a decrease in the ideality factor and an increase in barrier height with rising temperature. Additionally, interface states were analyzed through series resistance measurements using capacitance-conductance-voltage (C-G-V) techniques. These findings demonstrate that PANI films deposited on (311)A GaAs substrates exhibit superior electrical performance compared to those grown on conventional (100) GaAs and (311)B GaAs substrates.