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<p>In order to optimize the energy storage performance of (Ba<sub>0.85</sub>Ca<sub>0.15</sub>)(Zr<sub>0.1</sub>Ti<sub>0.9</sub>)O<sub>3</sub> (BCZT) lead-free ceramics, Bi(Zn<sub>0.5</sub>Zr<sub>0.5</sub>)O<sub>3</sub> (BZZ) was used as a relaxation component, and the (1-x)BCZT-xBZZ lead-free ceramic thick films were prepared by solid-state twin crystal method combined with tape-casting process. The samples prepared by the solid-phase twin crystal method achieve coexistence of multiple phases accompanied by reduced defects through the tape-casting process, greatly increasing breakdown field strength. The 0.85BCZT-0.15BZZ ceramic thick film achieves excellent energy storage performance with recoverable energy storage density (2.353&#xa0;J/cm<sup>3</sup>) and energy storage efficiency (86.33%) at enhanced breakdown field strength of 410&#xa0;kV/cm, and excellent discharge energy density (2.956&#xa0;J/cm<sup>3</sup>) at 400&#xa0;kV/cm, which can be attributed to the refined grain size, enhanced relaxation characteristic, disruption of long-range ferroelectric order, formation of polar nanoregions, and increased bandgap value due to the introduction of BZZ. This composition also exhibits outstanding frequency, fatigue cycling, and temperature stability, presenting extremely high practical application value in the field of pulse energy storage electronic devices.</p>

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Improving energy storage properties of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 lead-free ceramic thick films by doping Bi(Zn0.5Zr0.5)O3

  • 期刊论文

  • 发表日期：

    2025年8月19日

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  • Xinlin Yang,
  • Bijun Fang,
  • Xiaolong Lu,
  • Shuai Zhang,
  • Jianning Ding

摘要

In order to optimize the energy storage performance of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (BCZT) lead-free ceramics, Bi(Zn0.5Zr0.5)O3 (BZZ) was used as a relaxation component, and the (1-x)BCZT-xBZZ lead-free ceramic thick films were prepared by solid-state twin crystal method combined with tape-casting process. The samples prepared by the solid-phase twin crystal method achieve coexistence of multiple phases accompanied by reduced defects through the tape-casting process, greatly increasing breakdown field strength. The 0.85BCZT-0.15BZZ ceramic thick film achieves excellent energy storage performance with recoverable energy storage density (2.353 J/cm3) and energy storage efficiency (86.33%) at enhanced breakdown field strength of 410 kV/cm, and excellent discharge energy density (2.956 J/cm3) at 400 kV/cm, which can be attributed to the refined grain size, enhanced relaxation characteristic, disruption of long-range ferroelectric order, formation of polar nanoregions, and increased bandgap value due to the introduction of BZZ. This composition also exhibits outstanding frequency, fatigue cycling, and temperature stability, presenting extremely high practical application value in the field of pulse energy storage electronic devices.