<p>The present study is aimed to test the possibility for fabrication of nanoporous Ge layers by implantation with Ag⁺ of amorphous <i>a</i>-Ge thin film formed by an original method of ion-stimulated deposition. For this purpose, a monocrystalline <i>c</i>-Ge target was sputtered by accelerated low-energy Xe⁺ ions onto a quartz glass substrate coated with a conductive Ni layer. Ion implantation was performed at an energy of <i>E</i> = 30&#xa0;keV, a current density of <i>J</i> = 5 µA/cm² with doses of <i>D</i> = 2.0·10¹⁶ and 6.0·10¹⁶ ion/cm². Electron microscopy and optical reflectance spectroscopy were used to analyze the fabricated material. It was shown that at a low implantation dose the film surface remains smooth, whereas an increase in the dose leads to the formation of a nanoporous Ge layer consisting of needle-like nanowires randomly located in the plane of the sample surface.&#xa0;</p>