Scholarlink

<p>This study presents the synthesis and key characteristic properties of Ag<sub>25−x</sub>S<sub>35</sub>Se<sub>40</sub>Sb<sub>x</sub> (x = 0, 5, 10, 15, and 20 at%) quaternary chalcogenide thin films. Structural analysis using X-ray diffraction (XRD) indicates a phase transition from a crystalline to an amorphous state with increasing antimony (Sb) concentration. Field Emission Scanning Electron Microscopy (FESEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS) was employed to investigate the surface morphology and elemental composition of the films. Optical characterization reveals a decrease in transmittance accompanied by an increase in the absorption coefficient, suggesting enhanced optical absorption with increasing Sb content. The optical band gap exhibited a reduction from 2.04&#xa0;eV to 1.99&#xa0;eV for crystalline films (direct transitions), while for amorphous films (indirect transitions), the band gap decreased from 0.86&#xa0;eV to 0.58&#xa0;eV. The linear refractive index increased from 2.71 to 3.95, which corresponded to an enhancement in the high-frequency dielectric constant. The nonlinear refractive index increased from 1.58 to 29.72 esu, while the third-order nonlinear susceptibility (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="339_2025_8736_Article_IEq1.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="32" /> </InlineMediaObject> <EquationSource Format="TEX">\(\:{\chi\:}^{\left(3\right)}\)</EquationSource> </InlineEquation>) increased from 1.141 × 10⁻¹¹ to 31.18 × 10⁻¹¹ esu with increasing Sb concentration. Increased hydrophobicity with higher Sb concentration was confirmed from the surface wettability parameters deduced from the contact angle. The electrical current increased with higher Sb content, which is attributed to a reduction in electrical resistance. Such enhancement in electrical, optical, and surface properties leads to potential applications in optoelectronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhancement in electrical conductivity and hydrophobicity in Ag25 − xS35Se40Sbx thin films by Sb doping for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年7月4日

查看全文
  • Basanti Mohanty,
  • D. Alagarasan,
  • R. Naik

摘要

This study presents the synthesis and key characteristic properties of Ag25−xS35Se40Sbx (x = 0, 5, 10, 15, and 20 at%) quaternary chalcogenide thin films. Structural analysis using X-ray diffraction (XRD) indicates a phase transition from a crystalline to an amorphous state with increasing antimony (Sb) concentration. Field Emission Scanning Electron Microscopy (FESEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS) was employed to investigate the surface morphology and elemental composition of the films. Optical characterization reveals a decrease in transmittance accompanied by an increase in the absorption coefficient, suggesting enhanced optical absorption with increasing Sb content. The optical band gap exhibited a reduction from 2.04 eV to 1.99 eV for crystalline films (direct transitions), while for amorphous films (indirect transitions), the band gap decreased from 0.86 eV to 0.58 eV. The linear refractive index increased from 2.71 to 3.95, which corresponded to an enhancement in the high-frequency dielectric constant. The nonlinear refractive index increased from 1.58 to 29.72 esu, while the third-order nonlinear susceptibility ( \(\:{\chi\:}^{\left(3\right)}\) ) increased from 1.141 × 10⁻¹¹ to 31.18 × 10⁻¹¹ esu with increasing Sb concentration. Increased hydrophobicity with higher Sb concentration was confirmed from the surface wettability parameters deduced from the contact angle. The electrical current increased with higher Sb content, which is attributed to a reduction in electrical resistance. Such enhancement in electrical, optical, and surface properties leads to potential applications in optoelectronic devices.