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<p>We investigated electron wave propagation in Fibonacci-type quasi-periodic MQW devices consisting of two blocks with barrier and well layers. Our analysis of transmission spectra from different generations of Fibonacci reveals that the number of gap bands increases with the sequence generation level. The quasiperiodicity of the system causes the permissible energy bands to compress and new minigaps to arise. As the number of generations increases from <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="339_2025_8697_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="18" /> </InlineMediaObject> <EquationSource Format="TEX">\( S_2 \)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <mn>2</mn> </msub> </math></EquationSource> </InlineEquation> to <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="339_2025_8697_Article_IEq2.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="18" /> </InlineMediaObject> <EquationSource Format="TEX">\( S_4 \)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <mn>4</mn> </msub> </math></EquationSource> </InlineEquation>, new gaps between pass bands are formed, and thin flat bands arise at energies below 700 meV. Furthermore, as defects are added, the distance between the newest gap bands widens and permitted energy bands form inside the gap bands; the positions and thicknesses of the defects have a significant influence on electronic states that are local. We were able to find several states with superior transmission and quality parameters. These defect-induced localized states act as intermediate energy levels that can facilitate or control electron transport between quantum wells, enhancing carrier confinement and modifying transition rates which is crucial for the development of devices such as quantum cascade lasers and diodes.</p>

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Impact of structural defects on the creation of the electronic localized states in quasi-periodic GaAs/GaAlAs multi-quantum wells

  • 期刊论文

  • 发表日期：

    2025年6月18日

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  • Fatima Zahra Elamri,
  • Abdelkader Baidri,
  • Farid Falyouni,
  • Driss Bria

摘要

We investigated electron wave propagation in Fibonacci-type quasi-periodic MQW devices consisting of two blocks with barrier and well layers. Our analysis of transmission spectra from different generations of Fibonacci reveals that the number of gap bands increases with the sequence generation level. The quasiperiodicity of the system causes the permissible energy bands to compress and new minigaps to arise. As the number of generations increases from \( S_2 \) S 2 to \( S_4 \) S 4 , new gaps between pass bands are formed, and thin flat bands arise at energies below 700 meV. Furthermore, as defects are added, the distance between the newest gap bands widens and permitted energy bands form inside the gap bands; the positions and thicknesses of the defects have a significant influence on electronic states that are local. We were able to find several states with superior transmission and quality parameters. These defect-induced localized states act as intermediate energy levels that can facilitate or control electron transport between quantum wells, enhancing carrier confinement and modifying transition rates which is crucial for the development of devices such as quantum cascade lasers and diodes.