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<p>We summarize NiO/Ga<sub>2</sub>O<sub>3</sub> vertical heterojunction rectifier results from two separate 2-inch diameter wafers with drift layer nominal thickness of 15&#xa0;µm. For optimized edge termination dimensions, the breakdown voltages (V<sub>B</sub>) in the regions of the wafers with the highest drift layer thickness (16.7–18.2&#xa0;µm) and lowest background doping density (8 × 10<sup>15</sup>&#xa0;cm<sup>−3</sup>) are consistently in the range 10-13&#xa0;kV. Without edge termination, devices fabricated in the same areas show V<sub>B</sub> of 8.3–8.8&#xa0;kV. Over the entire wafer areas, the breakdown voltage can vary from 7.5-13&#xa0;kV for the same optimized edge termination scheme. With a larger edge termination distance, the V<sub>B</sub> is slightly improved. With a larger final metal extended distance, the V<sub>B</sub> is significantly improved. With the radius of the final metal smaller than the extent of the NiO, the V<sub>B</sub> is smaller or equal to the diodes without edge termination. There are two types of breakdown characteristic observed-in devices with abrupt increase in current near V<sub>B</sub>, there is catastrophic breakdown at the edge of the final metal, whereas devices with gradual increases in current above 4–5&#xa0;kV show no visible damage. The NiO/Ga<sub>2</sub>O<sub>3</sub> rectifiers show negative coefficients of V<sub>B</sub> of -12.9&#xa0;V.K<sup>−1</sup>, superior to that for Schottky barrier rectifiers fabricated on the same wafers, which exhibit values of -54.3&#xa0;V.K<sup>−1</sup>.</p>

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Reproducibility of 10 kV-class NiO/Ga2O3 heterojunction rectifiers

  • 期刊论文

  • 发表日期：

    2025年5月9日

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  • Jian-Sian Li,
  • Chao-Ching Chiang,
  • Hsiao-Hsuan Wan,
  • Fan Ren,
  • Stephen J. Pearton

摘要

We summarize NiO/Ga2O3 vertical heterojunction rectifier results from two separate 2-inch diameter wafers with drift layer nominal thickness of 15 µm. For optimized edge termination dimensions, the breakdown voltages (VB) in the regions of the wafers with the highest drift layer thickness (16.7–18.2 µm) and lowest background doping density (8 × 1015 cm−3) are consistently in the range 10-13 kV. Without edge termination, devices fabricated in the same areas show VB of 8.3–8.8 kV. Over the entire wafer areas, the breakdown voltage can vary from 7.5-13 kV for the same optimized edge termination scheme. With a larger edge termination distance, the VB is slightly improved. With a larger final metal extended distance, the VB is significantly improved. With the radius of the final metal smaller than the extent of the NiO, the VB is smaller or equal to the diodes without edge termination. There are two types of breakdown characteristic observed-in devices with abrupt increase in current near VB, there is catastrophic breakdown at the edge of the final metal, whereas devices with gradual increases in current above 4–5 kV show no visible damage. The NiO/Ga2O3 rectifiers show negative coefficients of VB of -12.9 V.K−1, superior to that for Schottky barrier rectifiers fabricated on the same wafers, which exhibit values of -54.3 V.K−1.