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<p>AlN crystals have many advantages, including wide bandgap, high critical breakdown electric field, superior thermal conductivity, excellent ultraviolet transmission, and strong radiation resistance. Currently, there is little research on the spontaneous nucleation mechanism of AlN. In this paper, we investigate the mechanism of spontaneous nucleation of AlN crystals and simulate the impact of varying crucible heights on spontaneous nucleation at the material surface by VR PVT software. Under optimal conditions, the centimeter-scale AlN crystals were obtained through spontaneous nucleation, facilitating the production of AlN wafers. Subsequently, GaN/Al<sub>0.20</sub>Ga<sub>0.80</sub>N heterojunction HEMTs were fabricated on AlN crystal substrates, demonstrating good electrical performance. With the development of growth technology, AlN single crystal is expected to become an ideal material for semiconductor applications.</p>

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The Mechanism of Spontaneous Nucleation of AlN and Its Application as Substrates in HEMTs

  • 期刊论文

  • 发表日期：

    2025年4月10日

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  • Ruixian Yu,
  • Wenhao Cao,
  • Yajun Zhu,
  • Peng Cui,
  • Liu Wang,
  • Kai Jiang,
  • Wenjing Tang,
  • Gang Zhao,
  • Lei Zhang,
  • Wei Xia

摘要

AlN crystals have many advantages, including wide bandgap, high critical breakdown electric field, superior thermal conductivity, excellent ultraviolet transmission, and strong radiation resistance. Currently, there is little research on the spontaneous nucleation mechanism of AlN. In this paper, we investigate the mechanism of spontaneous nucleation of AlN crystals and simulate the impact of varying crucible heights on spontaneous nucleation at the material surface by VR PVT software. Under optimal conditions, the centimeter-scale AlN crystals were obtained through spontaneous nucleation, facilitating the production of AlN wafers. Subsequently, GaN/Al0.20Ga0.80N heterojunction HEMTs were fabricated on AlN crystal substrates, demonstrating good electrical performance. With the development of growth technology, AlN single crystal is expected to become an ideal material for semiconductor applications.