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<p>In this work MoO<sub>3</sub>/Ag/MoO<sub>3</sub> (MAM) trilayer films were successfully deposited onto quartz substrates using RF and DC magnetron sputtering. Following deposition, the samples were annealed at 300 °C, 400 °C, and 500 °C for 2 h in an electric furnace. X-ray diffraction (XRD) was employed to characterize the crystallographic structure. The results showed that the as-deposited film and the sample annealed at 300 °C were amorphous, while the crystalline orthorhombic (α-MoO<sub>3</sub>) structure emerged at annealing temperatures of 400 °C and 500 °C. Atomic force microscopy (AFM) measurements were also performed to analyze the surface roughness of the films. In addition, field-emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectroscopy (EDX) were utilized to further analyze the surface morphology and elemental composition of the films. X-ray photoelectron spectroscopy (XPS) confirms the existence of Mo, O and Ag on the surface of both the as-deposited and annealed samples. The sheet resistance was measured using a four-point probe, and optical transmittance was evaluated via UV–Visible spectroscopy. Additionally, the variation in optical and electrical properties with annealing temperature was analyzed. The film annealed at 400 °C exhibited the optimal optoelectronic performance, with an improved figure of merit (FOM) of 6.10 × 10⁻<sup>2</sup> Ω⁻<sup>1</sup>. This work provides an effective method to prepared MoO<sub>3</sub>/Ag/MoO<sub>3</sub> trilayer transparent conductive films that potential application in optoelectronic devices especially in thin film solar cells.</p>

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Impact of annealing temperature on physical properties of transparent conductive MoO3/Ag/MoO3 trilayer films grown by sputtering

  • 期刊论文

  • 发表日期：

    2025年3月17日

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  • Zahra Nouri,
  • Fatemeh Hajakbari,
  • Alireza Hojabri

摘要

In this work MoO3/Ag/MoO3 (MAM) trilayer films were successfully deposited onto quartz substrates using RF and DC magnetron sputtering. Following deposition, the samples were annealed at 300 °C, 400 °C, and 500 °C for 2 h in an electric furnace. X-ray diffraction (XRD) was employed to characterize the crystallographic structure. The results showed that the as-deposited film and the sample annealed at 300 °C were amorphous, while the crystalline orthorhombic (α-MoO3) structure emerged at annealing temperatures of 400 °C and 500 °C. Atomic force microscopy (AFM) measurements were also performed to analyze the surface roughness of the films. In addition, field-emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectroscopy (EDX) were utilized to further analyze the surface morphology and elemental composition of the films. X-ray photoelectron spectroscopy (XPS) confirms the existence of Mo, O and Ag on the surface of both the as-deposited and annealed samples. The sheet resistance was measured using a four-point probe, and optical transmittance was evaluated via UV–Visible spectroscopy. Additionally, the variation in optical and electrical properties with annealing temperature was analyzed. The film annealed at 400 °C exhibited the optimal optoelectronic performance, with an improved figure of merit (FOM) of 6.10 × 10⁻2 Ω⁻1. This work provides an effective method to prepared MoO3/Ag/MoO3 trilayer transparent conductive films that potential application in optoelectronic devices especially in thin film solar cells.