Scholarlink

<p>This study investigates the effects of ultraviolet/ozone (UV/O<sub>3</sub>) treatment on the electrical and morphological characteristics of Pt/Ga<sub>2</sub>O<sub>3</sub> diodes. Surface treatment is crucial in gallium oxide (Ga₂O₃)-based devices due to its ability to reduce surface defects and improve interface quality, significantly enhancing device performance. Electrical characterization was performed using capacitance–voltage (C–V), current–voltage (I–V), breakdown voltage (BV), and temperature-dependent current–voltage (I–V–T) measurements. Surface analysis was performed via X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The UV/O₃-treated diodes exhibited improved performance, with the on/off ratio increasing from 5.60 × 10<sup>3</sup> to 2.49 × 10<sup>4</sup> and reduced reverse leakage current. Additionally, the treatment reduced Schottky barrier inhomogeneity, indicating a more uniform metal/semiconductor interface. These improvements are attributed to the reduction of oxygen vacancy defects and enhanced surface morphology, as confirmed by XPS and AFM. The results suggest that UV/O₃ treatment effectively enhances the performance of Ga₂O₃-based diodes by controlling interface properties.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effects of surface ultraviolet/ozone treatment on the electrical characteristics of Pt/Ga2O3/SiC Schottky diodes

  • 期刊论文

  • 发表日期：

    2025年2月7日

查看全文
  • Se-Rim Park,
  • Tae-Hee Lee,
  • Ji-Soo Choi,
  • Hyun-Woo Lee,
  • Seung-Hwan Chung,
  • Min-Yeong Kim,
  • Geon-Hee Lee,
  • Michael A. Schweitz,
  • Sang-Mo Koo

摘要

This study investigates the effects of ultraviolet/ozone (UV/O3) treatment on the electrical and morphological characteristics of Pt/Ga2O3 diodes. Surface treatment is crucial in gallium oxide (Ga₂O₃)-based devices due to its ability to reduce surface defects and improve interface quality, significantly enhancing device performance. Electrical characterization was performed using capacitance–voltage (C–V), current–voltage (I–V), breakdown voltage (BV), and temperature-dependent current–voltage (I–V–T) measurements. Surface analysis was performed via X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The UV/O₃-treated diodes exhibited improved performance, with the on/off ratio increasing from 5.60 × 103 to 2.49 × 104 and reduced reverse leakage current. Additionally, the treatment reduced Schottky barrier inhomogeneity, indicating a more uniform metal/semiconductor interface. These improvements are attributed to the reduction of oxygen vacancy defects and enhanced surface morphology, as confirmed by XPS and AFM. The results suggest that UV/O₃ treatment effectively enhances the performance of Ga₂O₃-based diodes by controlling interface properties.