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<p>A novel semiconducting material based on polyaniline doped with polyanetholesulfonic acid (PANI/PATSA) was successfully synthesized by oxidative chemical polymerization. The morphological and structural characteristics were studied by SEM analysis, X-ray diffraction (XRD), FTIR spectroscopy and thermal analysis. The UV–Vis spectrophotometry and electrochemistry in electrolyte (0.1&#xa0;M Na<sub>2</sub>SO<sub>4</sub>, pH 7) elucidated the optical and photo-electrochemical properties to establish a potential diagram, a preamble for the solar energy conversion. The obtained black powder PANI/PATSA is thermally stable up to 200&#xa0;°C. The XRD analysis reveals a semi-crystalline structure with an average crystallite size of ∼&#xa0;8&#xa0;nm. The diffuse reflectance spectroscopy gives a direct optical transition at 0.90&#xa0;eV, while the electrical conductivity (σ) measured up to 450&#xa0;K follows an exponential law with an activation energy of 0.34&#xa0;eV, characteristic of a polymer semiconductor. The Mott–Schottky plot indicates <i>n</i>-type conduction with a flat band potential (<i>E</i><sub>fb</sub>) of − 0.04 V<sub>SCE</sub> and an electron density (<i>N</i><sub>D</sub>) of 3.05 × 10<sup>25</sup>&#xa0;m<sup>−3</sup>. The interfacial impedance with bulk and grain boundaries contributions was demonstrated by the electrochemical impedance spectroscopy (EIS).</p>

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Synthesis, physical properties, and photo-electrochemical characterization of a novel n-type PANI/PATSA semiconductor

  • 期刊论文

  • 发表日期：

    2025年8月6日

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  • F. Saib,
  • A. Abdi,
  • L. A. Haouchine,
  • F. Touahra,
  • F. M. Laoui,
  • S. Zemmache,
  • D. Lerari,
  • K. Bachari,
  • M. Trari

摘要

A novel semiconducting material based on polyaniline doped with polyanetholesulfonic acid (PANI/PATSA) was successfully synthesized by oxidative chemical polymerization. The morphological and structural characteristics were studied by SEM analysis, X-ray diffraction (XRD), FTIR spectroscopy and thermal analysis. The UV–Vis spectrophotometry and electrochemistry in electrolyte (0.1 M Na2SO4, pH 7) elucidated the optical and photo-electrochemical properties to establish a potential diagram, a preamble for the solar energy conversion. The obtained black powder PANI/PATSA is thermally stable up to 200 °C. The XRD analysis reveals a semi-crystalline structure with an average crystallite size of ∼ 8 nm. The diffuse reflectance spectroscopy gives a direct optical transition at 0.90 eV, while the electrical conductivity (σ) measured up to 450 K follows an exponential law with an activation energy of 0.34 eV, characteristic of a polymer semiconductor. The Mott–Schottky plot indicates n-type conduction with a flat band potential (Efb) of − 0.04 VSCE and an electron density (ND) of 3.05 × 1025 m−3. The interfacial impedance with bulk and grain boundaries contributions was demonstrated by the electrochemical impedance spectroscopy (EIS).