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<p>This paper proposes an improvement upon a parameter extraction method developed in the work <i>"Analytical method for extraction of the single-diode model parameters for photovoltaic panels from datasheet data,"</i> which was published by Franco and Vieira (Electron Lett 54(8):519–521). It is shown that one of the single-diode model parameter extraction equations (namely, that for the shunt resistance) derived in such work always results in a mathematical identity that yields infinite resistance. A correction is proposed by introducing a deliberate approximation at the maximum power point derivative condition, which leads to a decoupled equation that avoids the mathematical identity. The new analytic expression obtained for the shunt resistance by means of this procedure yields reasonable parameter values and is shown to improve <i>I</i>–<i>V</i> characteristic accuracy compared to the original method.</p>

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Improving an analytic SDM parameter extraction method through a decoupled maximum power point approximation

  • 期刊论文

  • 发表日期：

    2025年11月26日

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  • Henrique Pires Corrêa

摘要

This paper proposes an improvement upon a parameter extraction method developed in the work "Analytical method for extraction of the single-diode model parameters for photovoltaic panels from datasheet data," which was published by Franco and Vieira (Electron Lett 54(8):519–521). It is shown that one of the single-diode model parameter extraction equations (namely, that for the shunt resistance) derived in such work always results in a mathematical identity that yields infinite resistance. A correction is proposed by introducing a deliberate approximation at the maximum power point derivative condition, which leads to a decoupled equation that avoids the mathematical identity. The new analytic expression obtained for the shunt resistance by means of this procedure yields reasonable parameter values and is shown to improve I–V characteristic accuracy compared to the original method.