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<p>This paper presents an analytical modeling approach for silicon carbide (SiC) power MOSFETs, focusing on optimizing parasitic parameters to achieve high accuracy with experimental results. Power device modeling combines state-space equations with manufacturer datasheet data to develop a computationally efficient equivalent electrical circuit model that accurately replicates switching behavior. An optimization algorithm refines parasitic parameters, ensuring a strong correlation with experimental data. Validated through MATLAB/Simulink simulations and experimental comparisons, the proposed model demonstrates superior accuracy and significantly reduced computational times relative to traditional SPICE models.</p>

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Analytical modeling of SiC-MOSFETs for parasitic parameter adjustment based on experimental data

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月6日

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  • Luigi Danilo Tornello,
  • Maria Giorgia Spitaleri,
  • Giuseppe Scarcella,
  • Mario Cacciato

摘要

This paper presents an analytical modeling approach for silicon carbide (SiC) power MOSFETs, focusing on optimizing parasitic parameters to achieve high accuracy with experimental results. Power device modeling combines state-space equations with manufacturer datasheet data to develop a computationally efficient equivalent electrical circuit model that accurately replicates switching behavior. An optimization algorithm refines parasitic parameters, ensuring a strong correlation with experimental data. Validated through MATLAB/Simulink simulations and experimental comparisons, the proposed model demonstrates superior accuracy and significantly reduced computational times relative to traditional SPICE models.