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<p>Through-silicon via (TSV) technology enables vertical interconnections in advanced semiconductor packaging by reducing interconnect length and increasing integration density. This study investigates femtosecond ultraviolet (UV) laser drilling for TSV fabrication in silicon wafers. A central composite design under response surface methodology was used to optimize three control factors—power (pulse energy), duration time (number of pulses), and defocus distance—with respect to recast layer area, heat-affected zone (HAZ), and aspect ratio. Power was identified as the dominant factor based on response trends, analysis of variance (ANOVA), and correlation analysis. The regression models achieved <i>R</i><sup><i>2</i></sup> values of 0.7643, 0.9407, and 0.9292 for recast layer area, HAZ, and aspect ratio, respectively. One-factor-at-a-time (OFAT) verification yielded average prediction errors of 8.26% and 4.57% for recast layer area and HAZ, while the original aspect-ratio model showed a larger error of 36.92%. After removing non-significant terms, the simplified aspect-ratio model reduced the average error to 18.90%. Cross-sectional observations further revealed shock-wave-induced damage during high-aspect-ratio hole formation. Reducing the duration time suppressed this effect while maintaining a hole depth of approximately 200&#xa0;μm and an aspect ratio of about 20. Based on this finding, a two-step laser strategy was developed to redistribute pulse accumulation and suppress shock-wave-induced damage. The Chi-squared test confirmed that both step durations significantly affected shock-wave severity, with the second step showing a stronger influence. Overall, this study establishes a sequential framework combining RSM optimization, shock-wave analysis, and a two-step laser strategy to improve TSV drilling quality.</p>

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Optimization of femtosecond laser parameters for through-silicon via based on response surface methodology

  • 期刊论文

  • 发表日期：

    2026年6月25日

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  • Yu-Hao Chen,
  • Yi-Kai Huang,
  • Hsu-Hsien Chen,
  • Sheng-Jye Hwang,
  • Chiao-Wen Liu

摘要

Through-silicon via (TSV) technology enables vertical interconnections in advanced semiconductor packaging by reducing interconnect length and increasing integration density. This study investigates femtosecond ultraviolet (UV) laser drilling for TSV fabrication in silicon wafers. A central composite design under response surface methodology was used to optimize three control factors—power (pulse energy), duration time (number of pulses), and defocus distance—with respect to recast layer area, heat-affected zone (HAZ), and aspect ratio. Power was identified as the dominant factor based on response trends, analysis of variance (ANOVA), and correlation analysis. The regression models achieved R2 values of 0.7643, 0.9407, and 0.9292 for recast layer area, HAZ, and aspect ratio, respectively. One-factor-at-a-time (OFAT) verification yielded average prediction errors of 8.26% and 4.57% for recast layer area and HAZ, while the original aspect-ratio model showed a larger error of 36.92%. After removing non-significant terms, the simplified aspect-ratio model reduced the average error to 18.90%. Cross-sectional observations further revealed shock-wave-induced damage during high-aspect-ratio hole formation. Reducing the duration time suppressed this effect while maintaining a hole depth of approximately 200 μm and an aspect ratio of about 20. Based on this finding, a two-step laser strategy was developed to redistribute pulse accumulation and suppress shock-wave-induced damage. The Chi-squared test confirmed that both step durations significantly affected shock-wave severity, with the second step showing a stronger influence. Overall, this study establishes a sequential framework combining RSM optimization, shock-wave analysis, and a two-step laser strategy to improve TSV drilling quality.