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<p>Silica (SiO₂), ceria (CeO₂), and alumina (Al₂O₃) abrasives have been widely used in the chemical mechanical polishing of silicon carbide (SiC) wafers. However, the influence of the pH environment of the polishing slurry on the physicochemical properties of the abrasives, which in turn affects the polishing efficiency and surface quality, has not been systematically elucidated. This study systematically analyzed the particle size distribution, polydispersity index, Zeta potential, and low-field nuclear magnetic resonance (LF-NMR) relaxation time of SiO₂, CeO₂, and Al₂O₃ abrasives. It revealed the evolution of the physicochemical properties of the abrasives in polishing slurries with different pH levels and clarified the mechanisms by which the abrasives achieve optimal polishing performance on the Si-face of 4&#xa0;H-SiC wafers under specific pH conditions. The results show that in acidic conditions (pH = 2–4), the material removal rates (MRRs) of the Si-faces by all three abrasives reached their peaks, and the surface roughness Sa values of the Si-faces were the lowest. In contrast, under near-neutral conditions (pH = 6–8), the MRRs of the Si-faces by all three abrasives were the lowest, and the Sa values of the Si-faces were the highest. The pH environment significantly affects the dispersion of the three kinds of abrasives and has a strong impact on the surface activity of SiO₂ and CeO₂, leading to substantial variations in both polishing rates and surface quality for Si-faces of 4&#xa0;H-SiC substrates.</p>

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Influences of pH environment on abrasive features and performance in chemical mechanical polishing Si-faces of SiC substrates

  • 期刊论文

  • 发表日期：

    2026年3月12日

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  • Ying Wei,
  • Ruhao Meng,
  • Ke Dai,
  • Guoyan Huo,
  • Haitao Wu,
  • Bing Liu,
  • Wenbo Bie,
  • Jianxiu Su,
  • Yanan Peng,
  • Jiapeng Chen

摘要

Silica (SiO₂), ceria (CeO₂), and alumina (Al₂O₃) abrasives have been widely used in the chemical mechanical polishing of silicon carbide (SiC) wafers. However, the influence of the pH environment of the polishing slurry on the physicochemical properties of the abrasives, which in turn affects the polishing efficiency and surface quality, has not been systematically elucidated. This study systematically analyzed the particle size distribution, polydispersity index, Zeta potential, and low-field nuclear magnetic resonance (LF-NMR) relaxation time of SiO₂, CeO₂, and Al₂O₃ abrasives. It revealed the evolution of the physicochemical properties of the abrasives in polishing slurries with different pH levels and clarified the mechanisms by which the abrasives achieve optimal polishing performance on the Si-face of 4 H-SiC wafers under specific pH conditions. The results show that in acidic conditions (pH = 2–4), the material removal rates (MRRs) of the Si-faces by all three abrasives reached their peaks, and the surface roughness Sa values of the Si-faces were the lowest. In contrast, under near-neutral conditions (pH = 6–8), the MRRs of the Si-faces by all three abrasives were the lowest, and the Sa values of the Si-faces were the highest. The pH environment significantly affects the dispersion of the three kinds of abrasives and has a strong impact on the surface activity of SiO₂ and CeO₂, leading to substantial variations in both polishing rates and surface quality for Si-faces of 4 H-SiC substrates.