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<p>Monocrystalline silicon (Mono-Si), owing to its excellent electrical properties, is widely used in key fields such as integrated circuits and photovoltaic. Wire cut electrical discharge machining (WEDM) is one of the processes used for slicing Mono-Si wafers. As a non-contact machining method based on spark discharge, WEDM is not constrained by material hardness or brittleness. Especially with the advent of third-generation semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN), researchers have renewed interest in WEDM and further developed diamond wire electrical discharge combined sawing (DWEDS) technology, which offers a novel strategy for cutting third-generation semiconductor materials. This paper presents a comprehensive review of WEDM and DWEDS applied to the cutting of mono-Si. First, it outlines the material removal mechanism, discharge characteristics, and key process parameters of WEDM. Then, it introduces the machining principle and recent developments of DWEDS, highlighting its advantages and potential in processing hard and brittle materials. Finally, future research directions are discussed. This review aims to provide theoretical insights and technological inspiration for advancing cutting technologies for third-generation semiconductors.</p>

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Research status and development trends of wire-cut electrical discharge machining of monocrystalline silicon: a review

  • 期刊论文

  • 发表日期：

    2025年10月2日

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  • Shengtan Hu,
  • Yufei Gao,
  • Dameng Cheng

摘要

Monocrystalline silicon (Mono-Si), owing to its excellent electrical properties, is widely used in key fields such as integrated circuits and photovoltaic. Wire cut electrical discharge machining (WEDM) is one of the processes used for slicing Mono-Si wafers. As a non-contact machining method based on spark discharge, WEDM is not constrained by material hardness or brittleness. Especially with the advent of third-generation semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN), researchers have renewed interest in WEDM and further developed diamond wire electrical discharge combined sawing (DWEDS) technology, which offers a novel strategy for cutting third-generation semiconductor materials. This paper presents a comprehensive review of WEDM and DWEDS applied to the cutting of mono-Si. First, it outlines the material removal mechanism, discharge characteristics, and key process parameters of WEDM. Then, it introduces the machining principle and recent developments of DWEDS, highlighting its advantages and potential in processing hard and brittle materials. Finally, future research directions are discussed. This review aims to provide theoretical insights and technological inspiration for advancing cutting technologies for third-generation semiconductors.