<p>Recently, the scribing/breaking method, a widely used technique for cutting brittle substrates such as glass, has also been used for silicon wafer singulation. This method offers advantages such as high speed, minimal damage, and dry processing. However, excessive force during the scribing process can produce radial and lateral cracks, which compromise specimen quality. To achieve chip-free, high-speed, and precise separation of silicon wafers, this paper proposes an ultrasonic-vibration-assisted scribing technique that combines ultrasonic vibrations with scribing. Moreover, the Taguchi method is employed to optimize the scribing parameters, such as scribing speed, applied scribing force, and ultrasonic vibration amplitude. Additionally, a concise theoretical framework is established, which attributes the deepening of median cracks to an additional increment induced by ultrasonic loading, thereby providing a theoretical basis for the observed results. Compared with non-vibration-assisted singulation, the proposed technique significantly increases the median crack depth while reducing radial and lateral cracks, enabling automated dice separation and improving edge durability. The median crack depth under vibration-assisted scribing with optimal parameters (0.341&#xa0;mm) was 8.2% higher than that under conventional non-vibration-assisted scribing, which represents significant improvements in efficiency and quality. At a low scribing force of 1.8 N and 20% ultrasonic power, the median crack depth increased by 92%, from 0.166 to 0.318&#xa0;mm; this improvement highlights the critical role of ultrasonic power in crack propagation. These findings provide a robust framework for improving wafer scribing quality to satisfy the demands of precision manufacturing.</p>