Scholarlink

<p>This work investigates the deposition of AlN thin films on 4-in Si(100) substrates via reactive RF magnetron sputtering (13.56&#xa0;MHz, 500 W RF power, 5 mTorr total pressure, N₂/Ar flow of 60/15 SCCM, 5&#xa0;cm target-to-substrate distance, room temperature, 60&#xa0;min) under systematic variation of reflection coefficient thresholds (<i>Γ</i> = 0.2 ~ 0.8) and three suppression/re-ignition regimes (2&#xa0;μs/2&#xa0;μs, 100&#xa0;μs/50&#xa0;μs, 1000&#xa0;μs/500&#xa0;μs). The key innovation of this study is the introduction of an ultrafast 2&#xa0;μs/2&#xa0;μs arc‐management cycle at <i>Γ</i> = 0.2—an order of magnitude faster than prior art—that intercepts micro-discharge events before they escalate. Adopting this scheme yields the lowest arc energy, narrows the AlN (002) XRD FWHM to 0.31° (vs. 0.36° under 1000&#xa0;μs/500&#xa0;μs), and reduces AFM-measured RMS roughness to 1.12&#xa0;nm (vs. 1.74&#xa0;nm). Film thickness remains uniform (182–203&#xa0;nm, variation &lt; 5%), reflecting stable deposition rates under ultrafast arc control. In situ optical emission spectroscopy reveals a pronounced N₂⁺ emission peak at ~ 390.93&#xa0;nm under the 2&#xa0;μs/2&#xa0;μs regime, indicating a highly ionized, stable plasma. A principal component analysis of the full‐spectrum OES dataset (~ 200,000 points per run) clearly discriminates the ultrafast regime from longer suppression settings, establishing a data‐driven correlation between plasma dynamics and film properties. Together, these findings demonstrate that our ultrafast arc management strategy not only intercepts micro‐arcing at its onset but also substantially enhances AlN film crystallinity, surface smoothness, and thickness uniformity, offering a robust pathway for high‐performance AlN thin‐film fabrication.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Optical emission spectroscopy and ultrafast arc management strategy on the quality of AlN thin films using a 13.56 MHz RF generator

  • 期刊论文

  • 发表日期：

    2025年7月24日

查看全文
  • Yu-Shin Chen,
  • Cheng-Yuan Kao,
  • Hsuan-Fan Chen,
  • Chih-Hao Tsui,
  • Ting-Yueh Yang,
  • Yiin-Kuen Fuh,
  • Tomi T. Li

摘要

This work investigates the deposition of AlN thin films on 4-in Si(100) substrates via reactive RF magnetron sputtering (13.56 MHz, 500 W RF power, 5 mTorr total pressure, N₂/Ar flow of 60/15 SCCM, 5 cm target-to-substrate distance, room temperature, 60 min) under systematic variation of reflection coefficient thresholds (Γ = 0.2 ~ 0.8) and three suppression/re-ignition regimes (2 μs/2 μs, 100 μs/50 μs, 1000 μs/500 μs). The key innovation of this study is the introduction of an ultrafast 2 μs/2 μs arc‐management cycle at Γ = 0.2—an order of magnitude faster than prior art—that intercepts micro-discharge events before they escalate. Adopting this scheme yields the lowest arc energy, narrows the AlN (002) XRD FWHM to 0.31° (vs. 0.36° under 1000 μs/500 μs), and reduces AFM-measured RMS roughness to 1.12 nm (vs. 1.74 nm). Film thickness remains uniform (182–203 nm, variation < 5%), reflecting stable deposition rates under ultrafast arc control. In situ optical emission spectroscopy reveals a pronounced N₂⁺ emission peak at ~ 390.93 nm under the 2 μs/2 μs regime, indicating a highly ionized, stable plasma. A principal component analysis of the full‐spectrum OES dataset (~ 200,000 points per run) clearly discriminates the ultrafast regime from longer suppression settings, establishing a data‐driven correlation between plasma dynamics and film properties. Together, these findings demonstrate that our ultrafast arc management strategy not only intercepts micro‐arcing at its onset but also substantially enhances AlN film crystallinity, surface smoothness, and thickness uniformity, offering a robust pathway for high‐performance AlN thin‐film fabrication.