Generalized Photoacoustic Modeling of Semiconductor Materials under Multi-Temperature Theory
摘要
This study presents a generalized photo-thermoelastic model for solid semiconductor media subjected to photoacoustic excitation within the framework of multi-temperature theory. The model captures the complex interactions among optical, thermal, and elastic waves, offering a more realistic representation compared to traditional single-temperature approaches. The governing equations are formulated by coupling the photoacoustic source with multi-temperature thermoelasticity, accounting for separate thermal responses associated with thermodynamic and conductive temperature fields. Analytical solutions are obtained using the normal mode analysis technique, allowing for detailed evaluation of the main physical field distributions. Comparative simulations highlight the differences in wave behavior under multi-temperature theories. The results show that the hyperbolic and two-temperature models outperform classical models in capturing sharp thermal gradients, delayed thermal wavefronts, and stronger stress and displacement responses. These findings confirm the importance of advanced thermal theories in improving the design and reliability of semiconductor-based photonic and optoelectronic devices.